高純度シリコンの製造に関する研究 (第5報)
SiHCl3水素還元の諸条件と引上単結晶との関連性
1963 年 79 巻 900 号 p. 397-401
詳細
1963 年 79 巻 900 号 p. 397-401
As the deposited silicon deecribed previously was lump or particle form of polycrystal, it was made into a single crystal by Czochralski method, and its properties were measured.
In the early runs, the sample obtained directly from the non-distilled material by the hydrogen reduction showed N type and about 60Ω-cm in resistivity, however in the latter runs using more purified hydrogen and larger eguipment, it showed less trouble in pulling and better properties. Si obtained by a quartz helices packed column of 30 plates indicated P type and more than 100Ω-cm, and one obtained by stainless steel Dixon packed column of 80 plates showed N type and 200Ω-cm. The distribution of resistivity was uniform in the sample obtained by distillation process.
;Boron bases of Si obtained from raw SiHCl3and distilled SiHCl3by stainless steel Dixon packed column were 0.8 ppb and 0.4 ppb respectively. Life time and concentration ob oxygen were also estimated.
