SPring-8/SACLA Research Report
Online ISSN : 2187-6886
Section B
Analysis of Interface Condition on GaN Based Electron Devices by Micro Beam XAFS
Yasunori TatenoJunji IiharaTakumi YonemuraAiko TominagaYoshihiro SaitoTsuyoshi KochiYukihiro TsujiHitoshi OsawaTomoya Uruga
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Keywords: GaN-HEMT, 2012A1108, BL39XU
JOURNAL OPEN ACCESS

2015 Volume 3 Issue 2 Pages 464-468

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[in Japanese]

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