Impact of Ge introduction on Cu₂SnS₃ absorber/buffer interface

抄録

In this work, the impact of the Ge introduction into Cu₂SnS₃ (CTS) on photovoltaic performances is investigated. By Ge introduction, non-radiative recombination near the absorber surface and the voids of absorber are decreased. Consequently, the interface carrier recombination of Cu₂Sn_1-xGe_xS₃ solar cell is lower than that of CTS solar cell, thereby increasing open-circuit voltage and fill factor. The conversion efficiency is consequently enhanced through Ge introduction.