ゾルゲル硫化法による Cu₂Sn_1-xGe_xS₃ 薄膜の作製法の検討

抄録

Cu₂SnS₃(CTS) can be adjusted to a band gap energy suitable for a solar cell by adding Ge. A method for preparing Cu₂Sn_1-xGe_xS₃(CTGS) thin films by sol-gel sulfurization method was investigated. Precursors were deposited by spin coating of Cu, Sn and Ge containing solution. The precursors were sulfurized at H₂S(3%)+N₂ atmosphere. XRD analysis of the samples showed shifting CTS peaks.