抄録
In this work, we report on a study of the magnetization reversal of (Ga, Mn) As/GaAs systems. Four 0.5 μm thick Ga1-χ Mn χ As layers (χ = 0.017, 0.025, 0.051 and 0.057) grown by low temperature molecular beam epitaxy on GaAs substrate are investigated using magneto-optical Kerr effect (MOKE). Firstly we analyze static magnetic properties and we identify a four-fold in-plane anisotropy. Using a modified Stoner-Wohlfart model, the magnetocrystalline anisotropy constants are estimated. In last part of this paper we study the dynamic effects on the magnetization reversal when increasing the applied field sweep rate.
