抄録
A Pd/Si dual seedlayer consisting of a 5-nm-thick Pd layer on a 5-nm-thick Si layer was deposited on a substrate prior to the formation of a [Co/Pd]n multilayered perpendicular magnetic recording medium, and the effect of the deposition conditions of the dual seedlayer on the magnetic properties of the [Co/Pd]n, multilayered film was investigated. The addition of N2 to the sputtering Ar gas during the Pd upper seedlayer deposition was effective for decreasing the value of α, which is the slope of a perpendicular M-H loop, defined as 4π(dM/dH)H=Hc, and reflects the magnitude of intergranular exchange coupling The value of α was further decreased by post-annealing of the Pd/Si dual seedlayer. By combining the effects of N2 addition and the post-annealing in preparing the Pd/Si dual seedlayer, both an increase in the reproducing resolution (D50) and a reduction in the medium noise were achieved. Furthermore, the preparation conditions were found to influence the surface morphology and the state of chemical bonding of the Pd/Si dual seedlayer.
