抄録
The multilayered FePt thin film structures have been fabricated. Silicon nitride films have been used as dielectric layer for sandwiching the FePt film. The Kerr rotation angle was affected by the composition of Pt concentration in the FePt layer and the FePt layer thickness. The maximum Kerr rotation angle was 0.82° for 10 nm Si3N4/Fe35Pt65/Si3N4/Al/Si structure. The variation of Kerr rotation with FePt thickness was also calculated by computer simulation.
