抄録
Molecular beam epitaxial (MBE) growth of InAs/GaAs(001) quantum dots and their annealing after deposition were investigated by grazing-incidence X-ray diffraction using a diffractometer integrated with an MBE apparatus. Use of synchrotron radiation and a two-dimensional X-ray detector enabled X-ray diffraction intensity mapping in the reciprocal lattice space at a rate of less than 10 s per frame. Results suggest that the degree of alloying that depends on the growth temperature has a strong influence on the structural evolution during annealing.
