抄録
A multiple-wave X-ray diffraction phenomenon, i.e., interaction between Bragg reflection and crystal-truncation-rod (CTR) scattering, is applied to characterize strain field under SiO2/Si(001) interface. Using the phenomenon it has been revealed that there is very small strain field extending over a mesoscopic-scale depth under the SiO2/Si interface and having a static fluctuation in the lateral direction. Information on distribution of strain field has been also obtained. In the present paper depth profile of strain field induced by wet thermal oxidation at 900 oC is qualitatively obtained, and compared with results of dry thermal oxidation at 900 oC and Kr/O2 plasma oxidation at 400 °C.
