抄録
Ferroelectric (l-x)BiFeO3-xPbTiO3 thin films with near the morphotropic phase boundary (MPB) composition have been prepared by the chemical solution deposition. Perovskite BiFeO3-PbTiO3 single-phase thin films on Pt/TiO2/SiO2/Si substrates with good surface morphology were successfully fabricated by optimizing several processing conditions. Typical polarization (P)-electric field (E) hysteresis loops were observed for (l-x)BiFeO3-xPbTiO3 (x=0.2, 0.3, 0.4) thin films, although some leakage current components were included at room temperature. Since the electrical resistivity of the BiFeO3-PbTiO3 films was improved in the low temperature region, those films exhibited well-saturated ferroelectric P-E hysteresis loops. The remanent polarization (Pr) and coercive field (Ec) of the 600°C-prepared 0.7BiFeO3-0.3PbTiO3 thin films at -190°C were approximately 60 micro C/cm2 and 300 kV/cm, respectively.
