抄録
This paper presents a comparison study of photoluminescence (PL) properties of freestanding silicon nanocrystals (Si-ncs) prepared by electrochemical etching and nanosecond pulsed laser ablation in two liquid solutions i.e. de-ionized water and spin on glass. The Si-ncs fabricated by electrochemical etching show visible room temperature PL with peak maximum at 680 nm. The PL peak of Si-ncs synthesized by pulsed laser ablation is significantly blue shifted with maximum centered at 420 nm after aging for at least 8 weeks. Laser ablation process in electronically compatible liquid spin on glass accelerated Si-ncs surface passivation. As a result the aging process was shortened to 24 hours with the same PL peak position. PL intensity of Si-ncs embedded in SOG increased with the laser fluence for ablation. A Si-ncs formation scheme during the nanosecond pulsed laser ablation in both liquids is proposed to explain obtained results and discussed in detail.
