抄録
A solution with nanocrystalline diamond (NCD) particles formed using the chemical vapor deposition (CVD) technique and post-treatment process was proposed. After the diamond deposition, the Si substrate with the deposited diamond particles was immersed in the HF/HNO3 mixture acid solution to etch the Si substrate. The diamond particles dispersed in the etchant were collected using a membrane filter and re-dispersed onto the ethyl alcohol. Form observations of the diamond particles and grain size distribution before and after the wet etching process were carried out by scanning electron microscope (SEM) and dynamic light scattering (DLS). A mean diamond particle diameter of approximately 250 nm was observed in the samples. In order to compare the crystalline qualities of the grown diamond, the diamond before and after the wet etching process were analyzed by Raman spectroscopy and electron energy loss spectroscopy (EELS). The Raman spectra with the sharp peak in 1333 cm-1 and the EELS spectra with the peak in 22.9 eV and 34.7 eV, oriented by the diamond particles, were confirmed. The results of these analysis indicated that there were no damage to the diamond particles by the wet etching process using the mixture acid etchant.
