抄録
Zinc Oxide (ZnO) nanostructures were deposited on SiO2 using the sol-gel method. The effects of SiO2 thickness on the nucleation and growth of ZnO nanostructures were studied. The oxidation time was varied from 5 minutes to 20 minutes to vary the SiO2 thickness. We observed different surface morphologies of ZnO nanostructures when deposited without SiO2 and with different thickness of SiO2 using scanning electron microscope (SEM). The structural property of nanostructured ZnO was investigated using an x-ray diffractometer (XRD), and showed different crystal growth orientations. We also measured the electrical current-voltage (IV) response and found that it is strongly dependent on the size of ZnO nanostructures. The optical property was measured using a photoluminescence (PL) spectrometer which indicates that the peak intensity is inversely proportional to the ZnO crystallite size. In this experiment, we found that SiO2 which oxidized for 5 minutes has the optimum optical property and is suitable for optical device applications.
