Abstract
The Ga2O3 has an oxygen detection characteristic at higher than 900℃, so this material attracts much attention as an oxygen sensor at high temperature. The β-Ga2O3 films have been prepared by a RF magnetron sputtering method. The influence of annealing process on the crystal properties was investigated. The effect of the measuring temperature on the crystal properties was also investigated. It was found that the crystal properties of films depend on the annealing temperature. The oxygen sensing properties were stabilized at the measuring temperature of 1000℃.
