抄録
The β-Ga2O3 films for oxygen (O2) gas sensors were prepared by the RF magnetron sputtering method. The effect of annealing time on the oxygen detection properties was evaluated. The films were annealed at 1000℃ with varying the annealing time from 2 to10h. It was found that sensing properties did not depend on the annealing time. The annealing temperature of 1000℃ is not high enough to vary the sensing properties. It means that Ga2O3 films are stable and long life for high temperature applications, for example O2 gas sensors. The influence of the two kinds of substrates, namely Si (100) and quartz (SiO2) on the oxygen detection properties was evaluated. It was found that the oxygen gas sensor fabricated on a quartz substrate had shorter response time than that on a Si substrate.
