Analysis of Super-Steep Subthreshold Slope Body-Tied SOI MOSFET and its Possibility for Ultralow Voltage Application

Abstract

In this paper, we review a super-steep subthreshold slope (SS) (<1 mV/dec) body-tied (BT) silicon on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) fabricated with 0.15 µm SOI technology and discuss the possibility of its use in ultralow voltage applications. The mechanism of the super-steep SS in the BT SOI MOSFET was investigated with technology computer-aided design simulation. The gate length/width and Si thickness optimizations promise further reductions in operation voltage, as well as improvement of the I_ON/I_OFF ratio. In addition, we demonstrated control of the threshold voltage and hysteresis characteristics using the substrate and body bias in the BT SOI MOSFET.