Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
Characterization of Hysteresis in SOI-Based Super-Steep Subthreshold Slope FETs
2018 年 E101.C 巻 5 号 p. 334-337
詳細
2018 年 E101.C 巻 5 号 p. 334-337
We report the characterization of hysteresis in SOI-based super-steep subthreshold slope FETs, which are conventional floating body and body-tied, and newly proposed PN-body-tied structures. We found that the hysteresis widths of the PN-body-tied structures are smaller than that of the conventional floating body and body-tied structures; this means that they are feasible for switching devices. Detailed characterizations of the hysteresis widths of each device are also reported in the study, such as dependency on the gate length and the impurity concentration.
