The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO₂ Directly Deposited on Si(100)

抄録

We have investigated post-metallization annealing (PMA) utilizing TiN gate electrode on the thin ferroelectric undoped HfO₂ directly deposited on p-Si(100) by RF magnetron sputtering. By post-deposition annealing (PDA) process at 600^°C/30 s in N₂, the memory window (MW) in the C-V characteristics was observed in the Al/HfO₂/p-Si(100) diodes with 15 to 24-nm-thick HfO₂. However, it was not obtained when the thickness of HfO₂ was 10 nm. On the other hand, the MW was observed for Pt/TiN/HfO₂ (10 nm)/p-Si(100) diodes utilizing PMA process at 600^°C/30 s. The MW was 0.5 V when the bias voltage was applied from -3 to 3 V.