The Effect of Kr/O₂ Sputtering on the Ferroelectric Properties of SrBi₂Ta₂O₉ Thin Film Formation

抄録

For the further scaling and lower voltage applications of nonvolatile ferroelectric memory, the effect of Kr/O₂ sputtering for SrBi₂Ta₂O₉ (SBT) thin film formation was investigated utilizing a SrBi₂Ta₂O₉ target. The 80-nm-thick SBT films were deposited by radio-frequency (RF) magnetron sputtering on Pt/Ti/SiO₂/Si(100). Compared with Ar/O₂ sputtering, the ferroelectric properties such as larger remnant polarization (Pr) of 3.2 µC/cm² were observed with decrease of leakage current in case of Kr/O₂ sputtering. X-ray diffraction (XRD) patterns indicated that improvement of the crystallinity with suppressing pyrochlore phases and enhancing ferroelectric phases was realized by Kr/O₂ sputtering.