IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Microwave and Millimeter-Wave Technologies
Overview and Prospects of High Power Amplifier Technology Trend for 5G and beyond 5G Base Stations
Koji YAMANAKAShintaro SHINJOYuji KOMATSUZAKIShuichi SAKATAKeigo NAKATANIYutaro YAMAGUCHI
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2021 年 E104.C 巻 10 号 p. 526-533

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High power amplifier technologies for base transceiver stations (BTSs) for the 5th generation (5G) mobile communication systems and so-called beyond 5G (B5G) systems are reviewed. For sub-6, which is categorized into frequency range 1 (FR1) in 5G, wideband Doherty amplifiers are introduced, and a multi-band load modulation amplifier, an envelope tracking amplifier, and a digital power amplifier for B5G are explained. For millimeter wave 5G, which is categorized into frequency range 2 (FR2), GaAs and GaN MMICs operating at around 28GHz are introduced. Finally, future prospect for THz GaN devices is described.

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© 2021 The Institute of Electronics, Information and Communication Engineers
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