Thermoelectric Effect of Ga-Sn-O Thin Films for Internet-of-Things Application

抄録

Thermoelectric effect of Ga-Sn-O (GTO) thin films has been investigated for Internet-of-Things application. It is found that the amorphous GTO thin films provide higher power factors (PF) than the polycrystalline ones, which is because grain boundaries block the electron conduction in the polycrystalline ones. It is also found that the GTO thin films annealed in vacuum provide higher PF than those annealed in air, which is because oxygen vacancies are terminated in those annealed in air. The PF and dimensionless figure of merit (ZT) is not so excellent, but the cost effectiveness is excellent, which is the most important for some examples of the Internet-of-Things application.