Influence of the Gate Voltage or the Base Pair Ratio Modulation on the λ-DNA FET Performance

Abstract

The influence of the gate voltage or base pair ratio modulation on the λ-DNA FET performance was examined. The result of the gate voltage modulation indicated that the captured electrons in the guanine base of the λ-DNA molecules greatly influenced the I_d-V_d characteristics, and that of the base pair ratio modulation indicated that the tendency of the conductivity was partly clarified by considering the activation energy of holes and electrons and the length and numbers of the serial AT or GC sequences over which the holes or electrons jumped. In addition, the influence of the dimensionality of the DNA molecule on the conductivity was discussed theoretically.