Abstract
Ga-doped ZnO thin films were prepared by RF magnetron sputtering. The effects of adding H2 to pure Ar sputtering gas were investigated. In the case of pure Ar at 2Pa, the resistivity is 7.45×10-3Ωcm, whereas for Ar+1%H2 at 0.3Pa, it markedly decreases to 2.52×10-4Ωcm. In this case, the carrier density and Hall mobility are 1.12×1021cm-3 and 23.4cm2/Vs, respectively. This conductive film also exhibits a transmittance of 90% within the visible-wavelength range. The addition of H2 and the decrease in the pressure results in the fabrication of a significantly more transparent and conductive film.
