Control of P3HT-FET Characteristics by Post-Treatments

Masaaki IIZUKA; Hiroshi YAMAUCHI; Kazuhiro KUDO

doi:10.1093/ietele/e91-c.12.1848

IEICE Transactions on Electronics

Online ISSN : 1745-1353
Print ISSN : 0916-8524

Special Section on The Forefront of 21st Century Organic Molecular Electronics

Control of P3HT-FET Characteristics by Post-Treatments

Masaaki IIZUKA, Hiroshi YAMAUCHI, Kazuhiro KUDO

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Keywords: organic field-effect transistor, P3HT, threshold voltage, post-treatment, thermal treatment

JOURNAL RESTRICTED ACCESS

2008 Volume E91.C Issue 12 Pages 1848-1851

DOI https://doi.org/10.1093/ietele/e91-c.12.1848

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Abstract

The control of the organic field-effect transistor characteristics is necessary to produce the integrated circuits using organic semiconductors. Variations in the poly (3-hexylthiophene) field-effect transistor characteristics upon post-treatment such as thermal treatment and voltage treatment in N₂ atmosphere have been investigated. The controllability and reproducibility of the threshold voltage and mobility were achieved as a result of the post-treatments.

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