Abstract
Time-resolved microscopic optical second harmonic generation (TRM-SHG) imaging measurement revealed quantitatively the potential drop at the electrode contact of pentacene field effect transistors (FET). An activation of the SH signal at the edge of Ag-source electrode indicates the presence of large potential drop at pentacene-Ag contact during device operation, whereas negligible potential drop was observed at pentacene-Au contact. These findings agree with the injection characteristics of electrodes owing to the relationship between the work function of the metal and the HOMO level of pentacene.
