IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on The Forefront of 21st Century Organic Molecular Electronics
High-κ Dielectric Layers for Bioelectronic Applications
Dirk BORSTLAPJürgen SCHUBERTWilli ZANDERAndreas OFFENHÄUSSERSven INGEBRANDT
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2008 Volume E91.C Issue 12 Pages 1894-1898

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Abstract

In many different bioelectronic applications silicon field-effect devices such as transistors or nanowires are used. Usually native or thermally grown silicon oxides serve as interfacing layer to the liquid. For an effective voltage to current conversion of the devices, the main demands for interface layers are low leakage current, low defect density, and high input capacitance. In this article we describe the fabrication and characterization of ultra-thin silicon oxide/high-κ material stacks for bioelectronics. A combination of ultra-thin silicon oxide and DyScO3 revealed the best results. This material stack is particularly interesting for future fabrication of field-effect devices for bioelectronic applications.

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© 2008 The Institute of Electronics, Information and Communication Engineers
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