High-κ Dielectric Layers for Bioelectronic Applications

抄録

In many different bioelectronic applications silicon field-effect devices such as transistors or nanowires are used. Usually native or thermally grown silicon oxides serve as interfacing layer to the liquid. For an effective voltage to current conversion of the devices, the main demands for interface layers are low leakage current, low defect density, and high input capacitance. In this article we describe the fabrication and characterization of ultra-thin silicon oxide/high-κ material stacks for bioelectronics. A combination of ultra-thin silicon oxide and DyScO₃ revealed the best results. This material stack is particularly interesting for future fabrication of field-effect devices for bioelectronic applications.