IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In2O3 Nano-Particles Embedded in Polyimide Insulator
Dong Uk LEESeon Pil KIMTae Hee LEEEun Kyu KIMHyun-Mo KOOWon-Ju CHOYoung-Ho KIM
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2008 Volume E91.C Issue 5 Pages 747-750


We fabricated the floating gate for silicon-on-insulator nonvolatile memory devices with In2O3 nano-particles embedded in polyimide insulator. Self-assembled In2O3 nano-particles were created by chemical reaction between the biphenyl dianhydride-p-phenylenediamine polymer precursor and indium films. The particles size and density of In2O3 nano-particles were 7nm and 6×1011cm-2, respectively. The current-voltage and retention time of fabricated device were characterized by using semiconductor parameter analyzer. A significant threshold voltage shift of fabricated nano-floating gate memory devices obtained, because of the charging effects of In2O3 nano-particles. And a memory window measured about 1V at initial status.

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© 2008 The Institute of Electronics, Information and Communication Engineers
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