IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
A Study on MgO-Ta2O5 System Ceramics for Microwave Component Application
Jae-Sik KIMEui-Sun CHOIYoung-Hie LEEKi-Won RYU
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2008 Volume E91.C Issue 5 Pages 772-775

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Abstract

In this study, the microwave dielectric properties of the Mg4Ta2O9 and Mg5Ta4O15 ceramics with composition ratio and sintering temperature were investigated and the dielectric resonators with these ceramics were simulated. TiO2 was doped in the Mg4Ta2O9 ceramics for improvement of temperature property. The (1-x)Mg4Ta2O9-xTiO2 and Mg5Ta4O15 ceramics were prepared by solid-state reaction method. According to the X-ray diffraction data, the (1-x)Mg4Ta2O9-xTiO2 ceramics had main phase of the Mg4Ta2O9 and MgTi2O5 peaks were appeared by additions of TiO2. In the Mg5Ta4O15 ceramics, the Mg4Ta2O9 and MgTa2O6 phase were coexisted and Mg5Ta4O15 phase was appeared with increments of sintering temperature. Microwave dielectric properties of (1-x)Mg4Ta2O9-xTiO2 ceramics were affected by MgTi2O5 and TiO2 phase. The quality factor had a little decrement compared to pure Mg4Ta2O9, but there was excellent improvement in TCRF by addition of TiO2. Densifications of the Mg4Ta2O9 and MgTa2O6 and existence of the Mg5Ta4O15 phase had influence on the microwave dielectric properties of the Mg5Ta4O15 ceramics. Dielectric constant, quality factor and TCRF of the (1-x)Mg4Ta2O9-xTiO2 and Mg5Ta4O15 ceramics sintered at 1450°C were 11.56-22.5, 24980-186410GHz, -36.02-+19.72ppm/°C and 8.2, 89473GHz, -10.91ppm/°C, respectively. ADS was used for simulation of DR. The simulated DR with the 0.5Mg4Ta2O9-0.5TiO2 and Mg5Ta4O15 ceramics had the S21 of -35.034dB at 11.97GHz and -28.493 dB at 10.50GHz, respectively.

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© 2008 The Institute of Electronics, Information and Communication Engineers
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