Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications

Abstract

Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These advantages can be particularly exploited in applications where high-speed operation and low-power consumption are essential. In this paper, we report on recent advances in the design, material growth, device characteristics, oxidation stability, and MMIC performance of Sb-based HEMTs with an InAlSb upper barrier layer. The high electron mobility transistors (HEMTs) exhibit a transconductance of 1.3S/mm at V_DS=0.2V and an f_TL_g product of 33GHz-μm for a 0.2μm gate length. The design, fabrication and improved performance of InAlSb/InGaSb p-channel HFETs are also presented. The HFETs exhibit a mobility of 1500cm²/V-sec, an f_max of 34GHz for a 0.2μm gate length, a threshold voltage of 90mV, and a subthreshold slope of 106mV/dec at V_DS=-1.0V.