A Test Structure for Asymmetry and Orientation Dependence Analysis of CMOSFETs

Toshihiro MATSUDA; Yuya SUGIYAMA; Keita NOHARA; Kazuhiro MORITA; Hideyuki IWATA; Takashi OHZONE; Takayuki MORISHITA; Kiyotaka KOMOKU

doi:10.1093/ietele/e91-c.8.1331

Special Section on Microelectronic Test Structures (ICMTS2007)

A Test Structure for Asymmetry and Orientation Dependence Analysis of CMOSFETs

Toshihiro MATSUDA, Yuya SUGIYAMA, Keita NOHARA, Kazuhiro MORITA, Hideyuki IWATA, Takashi OHZONE, Takayuki MORISHITA, Kiyotaka KOMOKU

Author information

Toshihiro MATSUDA
Department of Information Systems Engineering, Toyama Prefectural University
The Institute of Electronics, Information and Communication Engineers
Yuya SUGIYAMA
Department of Information Systems Engineering, Toyama Prefectural University
The Institute of Electronics, Information and Communication Engineers
Keita NOHARA
Department of Information Systems Engineering, Toyama Prefectural University
Kazuhiro MORITA
Department of Information Systems Engineering, Toyama Prefectural University
Hideyuki IWATA
Department of Information Systems Engineering, Toyama Prefectural University
The Institute of Electronics, Information and Communication Engineers
Takashi OHZONE
Okayama Prefectural University
The Institute of Electronics, Information and Communication Engineers
Takayuki MORISHITA
Okayama Prefectural University
The Institute of Electronics, Information and Communication Engineers
Kiyotaka KOMOKU
Okayama Prefectural University
The Institute of Electronics, Information and Communication Engineers

Keywords: CMOS, symmetry, orientation dependence, drain current, substrate current

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2008 Volume E91.C Issue 8 Pages 1331-1337

DOI https://doi.org/10.1093/ietele/e91-c.8.1331

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Abstract

A test structure to analyze asymmetry and orientation dependence of MOSFETs is presented. n-MOSFETs with 8 different channel orientation and three kinds of process conditions were measured and symmetry characteristics of I_Dsat and I_Bmax with respect to the interchange of source and drain was examined. Although both I_Dsat and I_Bmax have similar channel orientation dependence, I_Bmax in interchanged S/D measurements shows asymmetrical characteristics, which can be applied to a sensitive method for device asymmetry detection.

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