Abstract
In this study, I have numerically investigated the temperature distribution of n-type Si Nano Wire MOS Transistor induced by the self-heating effect by using a 3-D device simulator. The dependencies of temperature distribution within the Si Nano Wire MOS Transistor on both its gate length and width of the Si nano wire were analyzed. First, it is shown that the peak temperature in Si Nano Wire MOS Transistor increases by 100K with scaling the gate length from 54nm to 14nm in the case of a 50nm width Si nano wire. Next, it is found that the increase of its peak temperature due to scaling the gate length can be suppressed by scaling the size of the Si nano wire, for the first time. The peak temperature suppresses by 160K with scaling the Si nano wire width from 50nm to 10nm in the case of a gate length of 14nm. Furthermore, the heat dissipation in the gate, drain, and source direction are analyzed, and the analytical theory of the suppression of the temperature inside Si Nano Wire MOSFET is proposed. This study shows very useful results for future Si Nano Wire MOS Transistor design for suppressing the self-heating effect.
