Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation

Sang Hyuk PARK; Sangwoo KANG; Seongjae CHO; Dong-Seup LEE; Jung Han LEE; Hong-Seon YANG; Kwon-Chil KANG; Joung-Eob LEE; Jong Duk LEE; Byung-Gook PARK

doi:10.1587/transele.E92.C.647

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation

Sang Hyuk PARK, Sangwoo KANG, Seongjae CHO, Dong-Seup LEE, Jung Han LEE, Hong-Seon YANG, Kwon-Chil KANG, Joung-Eob LEE, Jong Duk LEE, Byung-Gook PARK

Author information

Sang Hyuk PARK
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University
Sangwoo KANG
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University
Seongjae CHO
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University
Dong-Seup LEE
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University
Jung Han LEE
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University
Hong-Seon YANG
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University
Kwon-Chil KANG
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University
Joung-Eob LEE
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University
Jong Duk LEE
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University
Byung-Gook PARK
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University

Keywords: single electron transistor, recessed channel, MOSFET current suppression

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2009 Volume E92.C Issue 5 Pages 647-652

DOI https://doi.org/10.1587/transele.E92.C.647

Details

Abstract

A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operation is proposed. Side gates of a RCDG-SET form electrical tunneling barriers around a recessed channel, which is newly introduced. Not only gate but also a recessed channel is self aligned to source and drain. Characteristics of a RCDG-SET are compared with those of previous DG-SETs through device simulation (SILVACO). Due to a recessed channel and a self aligned structure, MOSFET current which causes low Peak-to-Valley Current Ratio (PVCR) is suppressed. This property of a RCDG-SET is expected to contribute for room temperature operation.

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