Abstract
The novel SCR-based (silicon controlled rectifier) device for ESD power clamp is presented in this paper. The proposed device has a high holding voltage and a high triggering current characteristic. These characteristics enable latch-up immune normal operation as well as superior full chip ESD protection. The device has a small area in requirement robustness in comparison to ggNMOS (gate grounded NMOS). The proposed ESD protection device is designed in 0.25μm and 0.5μm CMOS Technology. In the experimental result, the proposed ESD clamp has a double trigger characteristic, a high holding voltage of 4V and a high trigger current of above 350mA. The robustness has measured to HBM 8kV (HBM: Human Body Model) and MM 400V (MM: Machine Model). The proposed device has a high level It2 of 52mA/μm approximately.
