Properties of SiO2 Surface and Pentacene OTFT Subjected to Atomic Hydrogen Annealing

Akira HEYA; Naoto MATSUO

doi:10.1587/transele.E93.C.1516

Special Section on Frontier of Thin-Film Transistor Technology

Properties of SiO₂ Surface and Pentacene OTFT Subjected to Atomic Hydrogen Annealing

Akira HEYA, Naoto MATSUO

著者情報

キーワード: pentacene, organic thin-film transistors, atomic hydrogen annealing, crystal orientation, carrier mobility

ジャーナル認証あり

2010 年 E93.C 巻 10 号 p. 1516-1517

DOI https://doi.org/10.1587/transele.E93.C.1516

詳細

抄録

Effects of atomic hydrogen annealing (AHA) on the film properties and the electrical characteristics of pentacene organic thin-film transistors (OTFTs) are investigated. The surface energy of SiO₂ surface and grain size of pentacene film were decreased with increasing AHA treatment time. For the treatment time of 300s, pentacene film showed the (00l) and (011') orientation and high carrier mobility in spite of small crystal grain.

責任著者(Corresponding author)

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