IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Regular Section
Equivalent Noise Temperature Representation for Scaled MOSFETs
Hiroshi SHIMOMURAKuniyuki KAKUSHIMAHiroshi IWAI
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ジャーナル 認証あり

2010 年 E93.C 巻 10 号 p. 1550-1552

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抄録
We proposed a novel representation of the thermal noise for scaled MOSFETs by applying an extended van der Ziel's model. A comparison between the proposed representation and Pospieszalski's model is also performed. We confirmed that the representation of drain noise temperature, Td corresponds to the electron temperature in a gradual channel region.
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© 2010 The Institute of Electronics, Information and Communication Engineers
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