Uncooled Infrared Radiation Focal Plane Array with Low Noise Pixel Driving Circuit

Risako UENO; Hiroto HONDA; Honam KWON; Koichi ISHII; Masako OGATA; Hitoshi YAGI; Ikuo FUJIWARA; Kazuhiro SUZUKI; Keita SASAKI; Hideyuki FUNAKI

doi:10.1587/transele.E93.C.1577

Special Section on Electronic Displays

Uncooled Infrared Radiation Focal Plane Array with Low Noise Pixel Driving Circuit

Risako UENO, Hiroto HONDA, Honam KWON, Koichi ISHII, Masako OGATA, Hitoshi YAGI, Ikuo FUJIWARA, Kazuhiro SUZUKI, Keita SASAKI, Hideyuki FUNAKI

Author information

Risako UENO
Toshiba Corporate Research & Development Center
Hiroto HONDA
Toshiba Corporate Research & Development Center
Honam KWON
Toshiba Corporate Research & Development Center
Koichi ISHII
Toshiba Corporate Research & Development Center
Masako OGATA
Toshiba Corporate Research & Development Center
Hitoshi YAGI
Toshiba Corporate Research & Development Center
Ikuo FUJIWARA
Toshiba Corporate Research & Development Center
Kazuhiro SUZUKI
Toshiba Corporate Research & Development Center
Keita SASAKI
Toshiba Corporate Research & Development Center
Hideyuki FUNAKI
Toshiba Corporate Research & Development Center

Keywords: infrared, focal plane array, MEMS

JOURNAL RESTRICTED ACCESS

2010 Volume E93.C Issue 11 Pages 1577-1582

DOI https://doi.org/10.1587/transele.E93.C.1577

Details

Abstract

We have analyzed the dominant noise sources in the driving circuit of an uncooled infrared radiation focal plane array fabricated on a silicon-on-insulator (SOI) substrate by 0.35µm CMOS technology and bulk- micromachining. We found no noise property of SOI-MOSFET inferior compared to those of NMOSs formed on SOI and bulk substrate, respectively. In addition, we reduced the total noise of the sensor chip by designing the current source NMOS sufficiently large, and optimized the operating current of pixel pn-junctions.

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