IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies
Micromachined RF Devices for Concurrent Integration on Dielectric-Air-Metal Structures
Tamotsu NISHINOMasatake HANGAIYukihisa YOSHIDASang-Seok LEE
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2010 Volume E93.C Issue 7 Pages 1111-1118

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Abstract
This paper proposes a concept of a concurrent configuration of radio-frequency (RF) micromachined and micro-electro-mechanical-system (MEMS) devices. The devices are fabricated on an originally developed dielectric-air-metal (DAM) structure that suits for fabrication of various devices all together. The DAM structure can propose membrane-supported hollow elements embedded in a silicon wafer by creating cavities in it. Even though the devices have different cavity depths, they are processed by just one planarization. In addition, since the structure is worked only from the front side of the wafer, no flipping process as well as no wafer bonding process is required, and the fact realizes low-cost concurrent integration. As applications of the DAM structures, a hollow grounded co-planar waveguide, lumped element circuitries, and an MEMS switch are demonstrated.
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© 2010 The Institute of Electronics, Information and Communication Engineers
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