IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Heterostructure Microelectronics with TWHM 2009
On the Large Signal Evaluation and Modeling of GaN FET
Iltcho ANGELOVMattias THORSELLKristoffer ANDERSSONAkira INOUEKoji YAMANAKAHifumi NOTO
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2010 Volume E93.C Issue 8 Pages 1225-1233

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Abstract

The large signal performance and model for GaN FET devices was evaluated with DC, S-parameters, and large signal measurements. The large signal model was extended with bias and temperature dependence of access resistances, modified capacitance and charge equations, as well as breakdown models. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.

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© 2010 The Institute of Electronics, Information and Communication Engineers
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