On the Large Signal Evaluation and Modeling of GaN FET

Iltcho ANGELOV; Mattias THORSELL; Kristoffer ANDERSSON; Akira INOUE; Koji YAMANAKA; Hifumi NOTO

doi:10.1587/transele.E93.C.1225

IEICE Transactions on Electronics

Online ISSN : 1745-1353
Print ISSN : 0916-8524

Special Section on Heterostructure Microelectronics with TWHM 2009

On the Large Signal Evaluation and Modeling of GaN FET

Iltcho ANGELOV, Mattias THORSELL, Kristoffer ANDERSSON, Akira INOUE, Koji YAMANAKA, Hifumi NOTO

Author information

Keywords: GaN, FET, small signal and large signal models

JOURNAL RESTRICTED ACCESS

2010 Volume E93.C Issue 8 Pages 1225-1233

DOI https://doi.org/10.1587/transele.E93.C.1225

Details

Abstract

The large signal performance and model for GaN FET devices was evaluated with DC, S-parameters, and large signal measurements. The large signal model was extended with bias and temperature dependence of access resistances, modified capacitance and charge equations, as well as breakdown models. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.

Content from these authors

Favorites & Alerts

Corresponding author

Register with J-STAGE for free!