Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2GHz

抄録

This work addresses the enormous efficiency and linearity potential of optimized AlGaN/GaN high-electron mobility transistors (HEMT) in conventional Doherty linear base-station amplifiers at 2.7GHz. Supported by physical device simulation, the work further elaborates on the use of AlGaN/GaN HEMTs in high-speed current-switch-mode class-D (CMCD)/class-S MMICs for data rates of up to 8Gbit/s equivalent to 2GHz RF-operation. The device needs for switch-mode operation are derived and verified by MMIC results in class-S and class-D operation. To the authors' knowledge, this is the first time 2GHz-equivalent digital-switch-mode RF-operation is demonstrated with GaN HEMTs with high efficiency.