Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems

Amine EL MOUTAOUAKIL; Tsuneyoshi KOMORI; Kouhei HORIIKE; Tetsuya SUEMITSU; Taiichi OTSUJI

doi:10.1587/transele.E93.C.1286

Special Section on Heterostructure Microelectronics with TWHM 2009

Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems

Amine EL MOUTAOUAKIL, Tsuneyoshi KOMORI, Kouhei HORIIKE, Tetsuya SUEMITSU, Taiichi OTSUJI

著者情報

キーワード: terahertz, plasmon resonance, emitter, dual grating gate dimension

ジャーナル認証あり

2010 年 E93.C 巻 8 号 p. 1286-1289

DOI https://doi.org/10.1587/transele.E93.C.1286

詳細

抄録

We report on the first terahertz emission from a novel dual grating gate plasmon-resonant emitter fabricated with InAlAs/InGaAs/InP material systems. The introduction of InP based heterostructure material systems, instead of the GaAs based ones, in order to improve the quality factor, has successfully enhanced the THz emission intensity and realized the spectral narrowing at room temperature.

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