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IEICE Transactions on Electronics
Vol. E94.C (2011) No. 11 P 1727-1732

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http://doi.org/10.1587/transele.E94.C.1727

Special Section on Electronic Displays

Solution-based organic field-effect transistors (OFETs) with low parasitic capacitance have been fabricated using a self-aligned method. The self-aligned processes using a cross-linking polymer gate insulator allow fabricating electrically stable polymer OFETs with small overlap area between the source-drain electrodes and the gate electrode, whose frequency characteristics have been investigated by impedance spectroscopy (IS). The IS of polymer OFETs with self-aligned electrodes reveals frequency-dependent channel formation process and the frequency response in FET structure.

Copyright © 2011 The Institute of Electronics, Information and Communication Engineers

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