Frequency Characteristics of Polymer Field-Effect Transistors with Self-Aligned Electrodes Investigated by Impedance Spectroscopy

抄録

Solution-based organic field-effect transistors (OFETs) with low parasitic capacitance have been fabricated using a self-aligned method. The self-aligned processes using a cross-linking polymer gate insulator allow fabricating electrically stable polymer OFETs with small overlap area between the source-drain electrodes and the gate electrode, whose frequency characteristics have been investigated by impedance spectroscopy (IS). The IS of polymer OFETs with self-aligned electrodes reveals frequency-dependent channel formation process and the frequency response in FET structure.