IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Regular Section
A New Critical Area Simulation Algorithm and Its Application for Failing Bit Analysis
Chizu MATSUMOTOYuichi HAMAMURAYoshiyuki TSUNODAHiroshi UOZAKIIsao MIYAZAKIShiro KAMOHARAYoshiyuki KANEKOKenji KANAMITSU
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ジャーナル 認証あり

2011 年 E94.C 巻 3 号 p. 353-360

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In order to accelerate yield improvement in semiconductor manufacturing, it is important to prevent the root causes of product-specific failures, such as systematic defects and parametric defects, which are different for each product. We herein propose a method for the investigation of product-specific failures by estimating differences between the actual failing bit signatures (FBSs) and the predicted FBSs caused by random defects. In order to estimate these differences accurately, we have developed a novel algorithm by which to extract the critical area for each FBS. The total failure rate errors of FBSs are within ±0.5% for embedded SRAMs. The proposed method identified the root causes of product-specific failures in 150 and 65nm technology node products.
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© 2011 The Institute of Electronics, Information and Communication Engineers
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