抄録
This paper presents the design of a wideband low noise amplifier (LNA) for the 3GPP LTE (3rd Generation Partnership Project Long Term Evolution) standard. The proposed LNA uses a common gate topology with a noise cancellation technique for wideband (0.7 to 2.7GHz) and low noise operation. The capacitive cross coupling technique is adopted for the common gate amplifier. Consequently input matching is achieved with lower transconductance, thereby reducing the power consumption and noise contribution. The LNA is designed in a 0.18µm process and the simulations show lower than -10dB input return loss (S11), and 2.4∼2.6dB noise figure (NF) over the entire operating band (0.7∼2.7GHz) while drawing 9mA from a 1.8V supply.
