抄録
This paper describes high-temperature electron transport properties of AlGaN-channel HEMT fabricated on a free-standing AlN substrate, estimated at temperatures between 25 and 300°C. The AlGaN-channel HEMT exhibited significantly reduced temperature dependence in DC and RF device characteristics, as compared to those for the conventional AlGaN/GaN HEMT, resulting in larger values in both saturated drain current and current gain cutoff frequency at 300°C. Delay time analyses suggested that the temperature dependence of the AlGaN-channel HEMT was primarily dominated by the effective electron velocity in the AlGaN channel. These results indicate that an AlGaN-channel HEMT fabricated on an AlN substrate is promising for high-performance device applications at high temperatures.
