抄録
Many studies have reported that the single-event transient (SET) width increases with temperature. However, the mechanism for this temperature dependency is not clear, especially for an N-hit SET. In this study, TCAD simulations are carried out to study the temperature dependence of N-hit SETs in detail. Several possible factors are examined, and the results show that the temperature dependence in bulk devices is due to the decrease in the carrier mobility with temperature in both the struck NMOS and the pull-up PMOS. In contrast, the temperature dependence in SOI devices is due to the decrease in the diffusion constant and carrier lifetime with temperature, which enhances the parasitic bipolar effect.
