Theoretical and Experimental Approaches to Select Resistive Switching Material

Abstract

We considered the oxygen diffusivity around a conductive filament of resistive switching oxides, with the aim of designing material appropriate for highly reliable non-volatile memory. Both theoretical and experimental analyses were performed for this consideration. The theoretically obtained oxygen chemical potential difference, which works as a driving force for diffusion, significantly depends on a material. Then, we experimentally confirmed that the oxygen diffusion behaviors vary greatly depending on the chemical potential differences.