IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Regular Section
Low Loss Intelligent Power Module with TFS-IGBTs and SiC SBDs
Qing HUAZehong LIBo ZHANG
著者情報
キーワード: power module, SiC, power loss, inverter
ジャーナル 認証あり

2015 年 E98.C 巻 10 号 p. 981-983

詳細
抄録
A low loss intelligent power module (IPM) that specifically designed for high performance frequency-alterable air conditioner applications is proposed. This IPM utilizes 600 V trench gate field stop insulated gate bipolar transistors (TFS-IGBTs) as the main switching devices to deliver extremely low conduction and switching losses. In addition, 600 V SiC schottky barrier diodes (SBDs) are employed as the freewheeling diodes. Compared to conventional silicon fast recovery diodes (FRDs) SiC SBDs exhibit practically no reverse recovery loss, hence can further reduce the power loss of the IPM. Experimental results reveal that the power loss of the proposed IPM is between 3.5∼21.7 W at different compressor frequencies from 10 to 70 Hz, which achieving up to 12.5%∼25.5% improvement when compared to the state-of-the-art conventional Si-based IGBT IPM.
著者関連情報
© 2015 The Institute of Electronics, Information and Communication Engineers
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